无锡华润芯功率半导体设计有限公司

InPower Semiconductor Co., Ltd.

National Service Hotline
0510-88111019

Reprinted from the depth industry study of the selection of Le Qing think tank


Semiconductor power devices are widely used in automotive, household electrical appliances, photovoltaic, wind, rail and other fields, and have penetrated into all aspects of people's life.

From the second half of 2016, the market of power semiconductor devices has been warmer, and demand continues to be sustained, but limited to production capacity, the original delivery cycle has been extended.

Generally speaking, the delivery cycle of MOSFET, rectifier and thyristor is about 8 weeks, but now part of MOSFET and rectifying Guan Hejing gate have been extended to 24 to 30 weeks.

Power semiconductor devices, core devices for power control

Power semiconductor devices can be used to control circuit interruption, so as to realize power rectifier, inverter, frequency conversion and other transformation.

Generally, a semiconductor device with a rated current of more than 1A is classified as a power semiconductor device. The interruption voltage of these devices is from a few volts to tens of thousands of volts.

The common power semiconductor devices are metal oxide semiconductor field effect tube (MOSFET), insulated gate bipolar transistor chip (IGBT) and module and so on.


Market analysis of power semiconductor devices
Although the start of power semiconductor devices in China is late, the market size is growing rapidly.

From 138 billion 600 million yuan in 2011 to 208 billion 800 million yuan in 2016, the annual average growth rate was 8.53%. It has become one of the largest power semiconductor markets in the world.

However, there is a big gap between the power semiconductor manufacturers in China and the international giants. In 2015 the world's major power semiconductor manufacturers for Texas Instruments, STM, Infineon and NXP and other foreign enterprises.

Domestic power semiconductor devices need a lot of import, for example, IGBT has 90% dependence on imports.

In 2014, the national integrated circuit industry investment fund ("large fund") was set up in China to promote the development of China's semiconductor industry.

The initial scale of the fund is 120 billion yuan, and the scale has reached 138 billion 700 million yuan by the end of June 2017. The local IC Investment Fund (including Chou Jianzhong) has reached 514 billion 500 million yuan.

Since its establishment, the implementation of the project has covered all aspects of integrated circuit design, manufacturing, packaging and testing, equipment, materials and ecological construction, and achieved the complete layout in the industrial chain.

Essentially, power semiconductor devices are very similar to integrated circuit (IC) chips. They are made up of PN junction, bipolar transistor and MOS structure. Therefore, they have the same theoretical basis and most processes are also the same. Therefore, the establishment of the large fund is also conducive to the development of power semiconductor devices.

In 2016, the fund shares to 600 million yuan Silan, investment of 8 inch chip production line for the production of IGBT.

The downstream demand is exuberant, and the delivery time of power semiconductor devices is prolonged

From the second half of 2016, the market of power semiconductor devices has been warmer, and demand continues to be sustained, but limited to production capacity, the original delivery cycle has been extended.

Generally speaking, the delivery cycle of MOSFET, rectifier and thyristor is about 8 weeks, but now part of MOSFET and rectifying Guan Hejing gate have been extended to 24 to 30 weeks. In short supply, suppliers began to raise prices.

In September 1, 2017, long power technology issued a notice to all the company's MOSFET price increase of 20%. In September 19th, long power technology to raise prices again. In the long MOSFET rose in price, other suppliers immediately follow up prices, including large, Nixon, Fuding etc. Taiwan MOSFET suppliers have prices.

One of the important reasons for the high demand for power semiconductor devices is the rapid growth of new energy vehicles in the lower reaches. As the largest new energy vehicle market in the world, the output of new energy vehicles reached 517 thousand vehicles in 2017, up 45.63% over the same period of October. It is estimated that 700 thousand sales targets will be completed throughout the year. Automotive electronics is one of the most important applications of power semiconductor devices, accounting for 42% in 2016.

Common power semiconductor devices

MOSFET

MOSFET and IGBT are the two most commonly used power semiconductor devices. Metal oxide semiconductor field effect transistor (MOSFET), referred to as gold oxide half field effect transistor, is a field-effect transistor that can be widely used in analog circuits and digital circuits.

Through the gate (G) on the applied voltage, the source (S) and drain (D) between the turn-on voltage or removed when a negative voltage is applied, then the source (S) and drain (D) disconnect between. The N base layer is designed to prevent high pressure breakdown of the component in the case of turn off. As a result, the higher the voltage is, the thicker the N base layer is and the greater the resistance.

In order to improve the voltage endurance of MOSFET, insulated gate bipolar transistor (IGBT) adds a P+ layer on the basis of MOSFET and forms a PN diode with the N base layer. In the case of shutdown, the PN junction is subjected to a large share voltage, while the MOSFET in the structure does not need to withstand high voltage, thus improving the voltage withstand performance of the components. Therefore, IGBT is generally used in high voltage power products, the voltage range is generally 600V-6500V; the MOSFET application voltage is relatively low, from more than ten volts to 1000V.

However, the delay time of IGBT is greater than MOSFET, so IGBT is applied to the scenario where the handover frequency is below 25kHz, and MOSFET can be applied to the scenario where the handover frequency is greater than 100kHz.

The leading manufacturers of global power MOSFET include Infineon, ESI semiconductor, reesa and other international giants.

Among them, Infineon has a market share of 26.4% in power MOSFET, two times the second - bit A Morimi semiconductor and a leading power in the power MOSFET industry.

The domestic market share of power MOSFET also mainly by Infineon, A Morimi, Renesas semiconductor and other international giants occupy only, Silan and SANGHUA respectively accounted for 1.9% and 1.1% of the market share, the huge import substitution space.

IGBT

The application field of IGBT is extremely extensive. Small appliances, digital products, rail transportation, aerospace, clean power generation, new energy vehicles, smart grid and other strategic emerging industries will use IGBT.

According to the voltage distribution, the IGBT used in the field of consumer electronics is generally less than 600V; solar inverters and new energy vehicles are usually around 1200V; the IGBT voltage used in rail transit is between 3300V-6500V.

According to China industrial information network, as of 2015, China's IGBT market scale was 9 billion 480 million yuan, and the 2008-2015 year compound growth rate reached 13.65%. However, China's IGBT market started late, the localization rate was only 10%, and the rest 90% of IGBT still depended on imports.

The field of high-power IGBT in China has achieved the lead in independent research and production and import substitution. The new energy vehicle field is relatively weak and import substitution is going on. In the field of new energy vehicles, IGBT is mainly used in power drive system, vehicle air conditioning system and charging pile.

1. IGBT is mainly used in motor controller, the cost of motor controller is about 30%, and IGBT convers the DC power battery to AC motor to drive motor.

2. charging pile, IGBT is mainly used in DC DC fast charging pile, pile through the three-phase alternating current input through a three-phase bridge rectifier circuit into DC rectifier, filter for high frequency DC-DC power converter, and the output to DC, charging for electric vehicle battery.

3. in the vehicle air conditioning system will also use IGBT to achieve a small power DC/AC inverter, thus driving the operation of the air conditioning system.

According to industry research data, the IGBT used for new energy vehicles generally accounts for about 10% of the total cost of electric vehicles.

At the end of 2016, China's new energy vehicle production reached 517 thousand units; in November 2016 the State Council issued the "13th Five-Year" national strategic emerging industry development plan of the notice ": by 2020, new energy vehicles in the production and marketing of more than 2 million, the cumulative sales of more than 5 million vehicles.

According to estimates, 2017-2020 years of new energy vehicles, China's average annual growth rate of about 40%, 2017-2020 years to add new energy vehicle output is about 5 million 160 thousand units, according to the production cost per vehicle 100 thousand, accounted for 10% of the IGBT calculation, 2017-2020 years, driven by new energy automotive IGBT market will reach 51 billion 600 million yuan.

IGBT is mainly used in DC charging pile. In November 2015, the NDRC Energy Bureau, Ministry of industry, Ministry of housing, four ministries jointly issued "guidelines for the development of electric vehicle charging infrastructure (2015-2020 years)" notice, clearly in 2020, more than 12 thousand new centralized charging station, charging pile distributed more than 4 million 800 thousand, to meet the needs of 5 million electric vehicle charging.

At present, China's stock market charging pile of about 200 thousand during 13th Five-Year, there are still nearly 5 million charging pile construction requirements, assumed that the DC charging pile 1 million, the unit cost of 100 thousand IGBT, the total cost ratio of 20%, 2017-2020 years, charging pile driven by the IGBT market will reach 20 billion yuan.

To sum up, the whole field of new energy vehicles (car + charging) fast layout and development, will greatly stimulate the market demand for IGBT, during the remainder of 13th Five-Year (2017-2020), IGBT in the new energy automotive industry market size will exceed 70 billion yuan.

IGBT the main suppliers in the global IGBT market including Infineon (Infineon), MITSUBISHI (Mitsubishi), Fuji motor (Fuji Electric), Toshiba (Toshiba), ABB, Fairchild (Fairchild).

Among them, Semikron, Fairchild (Fairchild) and other enterprises in a dominant position in the field of consumer IGBT; ABB, Infineon, MITSUBISHI motors occupy the advantage in the medium voltage industrial grade IGBT field; high voltage field in more than 3300V, Infineon, ABB, MITSUBISHI three companies occupy a monopoly position, and represents the highest level of international IGBT technology the.

According to the annual report of 2015 at Infineon Infineon, 27.6% of the market share in the global IGBT market in the top spot, followed by MITSUBISHI motor and Fuji, respectively, 20.6% and 12.5% of the global market share reached 73.2%; CR5, a high degree of concentration.

The domestic IGBT industry started late, and there are mainly 26 enterprises in the industry chain. Among them, there are 7 enterprises in the IDM mode, 6 in the packaging module business, 10 in the chip design, and 5 in the chip manufacture.

Domestic enterprises are also actively catching up, and have achieved good results. For example, jzecho has the ability to design and manufacture thyristors independently, develop and produce more than 200 types and specifications of standard products.

The product of Yang Jie Technology covers the products of rectifier bridge, diode, MOSFET module and so on, and is active in the layout of SiC wide band gap semiconductor. Silan products in the global medium size (chip size less than or equal to 150mm) chip production enterprises ranked fifth, 8 inch chip production line in the first half of 2017 has entered the trial production stage.

China microelectronics has successfully developed the sixth generation of IGBT products, and has achieved good application feedback in the fields of new energy vehicles, charging piles, frequency conversion appliances and other fields.